D. A. Kudriashov, A. S. Gudovskikh, A. I. Baranov, “Precision chemical etching of GaP(NAs) epitaxial layers for the formation of monolithic optoelectronic devices”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 13,Pages <nobr>1668

This article is cited in 1 paper

Manufacturing, processing, testing of materials and structures

Precision chemical etching of GaP(NAs) epitaxial layers for the formation of monolithic optoelectronic devices

D. A. Kudriashov^a, A. S. Gudovskikh^ab, A. I. Baranov^a

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"

Abstract: The results of studying the applicability of various etchants for the precision wet etching of structures of monolithic optoelectronic devices containing GaPNAs layers are presented. It is shown that an etchant based on potassium iodide and hydrochloric acid is best suited for this purpose. The presence of nitrogen (up to 4%) and arsenic in the semiconductor composition does not greatly affect the etchant action but requires additional calibration experiments to refine the etching rate in each particular case. Examples of the practical application of precision etching to measure the characteristics of GaPNAs-based solar cells are presented.

Received: 18.06.2018
Accepted: 02.07.2018

DOI: 10.21883/FTP.2018.13.46885.8937