M. M. Venediktov, E. A. Tarasova, A. D. Bozhen'kina, S. V. Obolensky, V. V. Elesin, G. V. Chukov, I. O. Metelkin, M. A. Krevskiy, D. I. Dyukov, A. G. Fefelov, “Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12,Pages 1414

This article is cited in 3 papers

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation

M. M. Venediktov^a, E. A. Tarasova^b, A. D. Bozhen'kina^b, S. V. Obolensky^b, V. V. Elesin^c, G. V. Chukov^c, I. O. Metelkin^c, M. A. Krevskiy^d, D. I. Dyukov^d, A. G. Fefelov^d

^a Federal Research and Production Center "Y. Sedakov Research Institute of Measuring Systems", Nizhny Novgorod, Russia
^b Lobachevsky State University of Nizhny Novgorod
^c National Engineering Physics Institute "MEPhI", Moscow
^d OAO Research-and-Production Enterprise "Salut", Nizhny Novgorod, Russia

Abstract: The influence of nonequilibrium processes in semiconductor structures under the effect of radiation on the characteristics of structures and microwave transistors based on them is analyzed. Special attention is paid to the comparison of pilot (experimental) and series-produced structures and transistors based on them before and after $\gamma$-neutron irradiation.

Keywords: Microwave Transistors, Radiation-induced Defect Clusters (RDCs), Electron Distribution Profiles, Bulk Ionization Conductivity, Transistor Current.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.12.46749.28