Nonuniversal scaling behavior of conductivity peak widths in the quantum Hall effect in InGaAs/InAlAs structures

The longitudinal $\rho_ {xx}$ and Hall $\rho_ {xy}$ resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic fields up to 12 T at temperatures of $T$ = 0.4–30 K in two-dimensional electron systems $n$-In$_{0.9}$Ga$_{0.1}$Аs/In$_{0.81}$Al$_{0.19}$As. The nonuniversal scaling behavior of the temperature dependence of the width of the resistance $\rho_{xx}$ peaks related to the effect of the large-scale random potential and of Landau-level mixing with opposite spin directions was found.