K. E. Spirin, D. M. Gaponova, K. V. Marem'yanin, V. V. Rumyantsev, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, “Bipolar persistent photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12,Pages <nobr>1482

This article is cited in 10 papers

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Bipolar persistent photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures

K. E. Spirin^a, D. M. Gaponova^a, K. V. Marem'yanin^a, V. V. Rumyantsev^a, V. I. Gavrilenko^a, N. N. Mikhailov^b, S. A. Dvoretskii^b

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The effects of the residual photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures are studied at $T$ = 4.2 K. It is shown that the residual photoconductivity in this system has a bipolar character, i.e., both positive and negative persistent photoconductivity is present depending on the illumination wavelength.

Keywords: Persistent Photoconductivity (PPC), Residual Photoconductivity, Bipolar Character, High-energy Holes, Incident Radiation Wavelength.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.12.46761.41