P. A. Alekseev, M. S. Dunaevskii, A. O. Mikhailov, S. P. Lebedev, A. A. Lebedev, I. V. Ilkiv, A. I. Khrebtov, A. D. Bouravlev, G. E. Cirlin, “Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12,Pages <nobr>1507

This article is cited in 3 papers

Micro- and nanocrystalline, porous, composite semiconductors

Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates

P. A. Alekseev^a, M. S. Dunaevskii^a, A. O. Mikhailov^a, S. P. Lebedev^b, A. A. Lebedev^a, I. V. Ilkiv^c, A. I. Khrebtov^b, A. D. Bouravlev^acd, G. E. Cirlin^bcd

^a Ioffe Institute, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^c Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg

Abstract: The electrical properties of GaAs nanowires grown on a 6$H$-SiC (0001) substrate covered with graphene single layers and bilayers are studied. The nanowires are grown by molecular-beam epitaxy, with gold as a catalyst. The electrical properties are studied by measuring and analyzing the current–voltage characteristics of single nanowires vertically grown on a substrate. Numerical simulation of the experimental current–voltage curves revealed the presence of a $\sim$0.6-V-high Schottky barrier between the nanowires and graphene. The appearance of the barrier is due to the formation of excess arsenic at the nanowire/graphene interface.

Keywords: GaAs NWs, Nanowires (NWs), Hybrid Substrates, Excess Arsenic, Schottky Barrier.

Received: 09.04.2018
Accepted: 17.04.2018

DOI: 10.21883/FTP.2018.12.46766.8882