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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 11, Pages 1280–1285 (Mi phts5680)

This article is cited in 5 papers

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Spinodal decomposition in InSb/AlAs heterostructures

D. S. Abramkinab, A. K. Bakarova, A. K. Gutakovskiiab, T. S. Shamirzaevacb

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Ural Federal University, Ekaterinburg

Abstract: The atomic structure and energy spectrum of heterostructures formed in a system of InAs/AlAs binary compounds are studied. The In$_{x}$Al$_{1-x}$Sb$_{y}$As$_{1-y}$ alloy, from which quantum wells are formed in InSb/AlAs structures, decomposes into two phases with different compositions. The characteristic dimensions of regions containing separate phases of the alloy in the structure plane are 5–7 nm. Spinodal decomposition of the alloy brings about the formation of coexisting indirect-gap regions with type-I and type-II energy spectra in quantum wells of the heterostructures.

Keywords: Heterostructures, Spinodal Decomposition, Quantum Wells (QW), AlAs Matrix, Quantum Confinement Levels.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.11.46583.05


 English version:
Semiconductors, 2018, 52:11, 1392–1397

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