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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 11, Pages 1291–1294 (Mi phts5682)

This article is cited in 3 papers

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

“Extremum loop” model for the valence-band spectrum of a HgTe/HgCdTe quantum well with an inverted band structure in the semimetallic phase

S. V. Gudinaa, A. S. Bogolubskiia, V. N. Neverova, N. G. Shelushininaa, M. V. Yakuninab

a Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
b Institute of Natural Sciences and Mathematics, Ural Federal University, Yekaterinburg, Russia

Abstract: The effective mass and spectrum of Landau levels are calculated for the valence band of a HgTe/HgCdTe quantum well with an inverted band structure in the quasi-classical “extremum loop” model. The Landau-level fan of the valence band in the semimetallic phase starts at $B$ = 0 from the energy corresponding to that of the lateral maxima of this band and is overlapped with the Landau-level fan of the conduction band.

Keywords: Extremum Loop, Inverted Band Structure, Quantum Wells (QW), Semimetallic Phase, Landau Levels (LL).

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.11.46585.07


 English version:
Semiconductors, 2018, 52:11, 1403–1406

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