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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 11, Pages 1313–1316 (Mi phts5687)

This article is cited in 1 paper

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Modification of the ferromagnetic properties of Si$_{1-x}$Mn$_{x}$ thin films synthesized by pulsed laser deposition with a variation in the buffer-gas pressure

O. A. Novodvorskiia, V. A. Mikhalevskiia, D. S. Guseva, A. A. Lotina, L. S. Parshinaa, O. D. Khramovaa, E. A. Cherebyloa, A. B. Drovosekovb, V. V. Ryl'kovcd, S. N. Nikolaevc, K. Yu. Chernoglazovc, K. I. Maslakove

a Institute of Laser and Information Technologies – Branch of the Federal Scientific Research Center "Crystallography and Photonics", Russian Academy of Sciences, Shatura, Russia
b P. L. Kapitza Institute for Physical Problems, Russian Academy of Sciences, Moscow
c National Research Centre "Kurchatov Institute", Moscow
d Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
e Lomonosov Moscow State University

Abstract: A series of thin films of Si$_{1-x}$Mn$_{x}$ alloys with a thickness from 50 to 100 nm grown by pulsed laser deposition on an Al$_2$O$_3$ substrate in vacuum and in an argon atmosphere is investigated. The significant effect of the buffer-gas pressure in the sputtering chamber on the structural and magnetic homogeneity of the obtained films is shown. The conditions for the formation of a ferromagnetic phase with a high Curie temperature ( $>$ 300 K) in the samples are studied. With the use of the Langmuir probe method, the threshold of ablation of a MnSi target by second harmonic radiation ($\lambda$ = 532 nm) of a Nd:YAG $Q$-switch laser is determined. The time-of-flight curves for the plume ions are obtained with a change in the energy density at the target and argon pressure in the sputtering chamber. A nonmonotonic dependence of the probe time-of-flight signal amplitude on the argon pressure is established for high-energy particles of the plume.

Keywords: Pulsed Laser Deposition (PLD), Ion Plume, Argon Pressure, Sputtering Chamber, Langmuir Probe Method.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.11.46590.12


 English version:
Semiconductors, 2018, 52:11, 1424–1427

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