R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. P. Lebedev, A. A. Lebedev, D. A. Kirilenko, P. A. Alekseev, G. E. Cirlin, “MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11,Pages <nobr>1317

This article is cited in 2 papers

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer

R. R. Reznik^a, K. P. Kotlyar^b, I. V. Ilkiv^b, I. P. Soshnikov^bcd, S. P. Lebedev^d, A. A. Lebedev^d, D. A. Kirilenko^d, P. A. Alekseev^d, G. E. Cirlin^b

^a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^b Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^d Ioffe Institute, St. Petersburg

Abstract: The possibility in principle of the MBE (molecular-beam epitaxy) growth of GaP and InP nanowires on a SiC substrate with a graphene layer is demonstrated for the first time. InP nanowires on such a substrate have no stacking faults and possess an ideal crystallographic quality. At the same time, GaP nanowires have structural defects of the type of twins and the reversal of crystallographic phases at the top and at the base. The results of structural measurements demonstrate that the nanowires are formed in the wurtzite phase, which is not typical of bulk III–V materials.

Keywords: Nanowires (NWs), Wurtzite Phase, Stacking Fault, Conventional Semiconductor Electronics, Effusion Source.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.11.46591.13