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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 11, Pages 1321–1325 (Mi phts5689)

This article is cited in 6 papers

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Study of the structural and morphological properties of HPHT diamond substrates

P. A. Yunina, P. V. Volkova, Yu. N. Drozdova, A. V. Koliadinb, S. A. Koroleva, D. B. Radishevc, E. A. Suroveginaa, V. I. Shashkina

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b New Diamond Technology LLC, St. Petersburg, Russia
c Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod

Abstract: The morphological and structural properties of a series of high-pressure high-temperature (HPHT) single-crystal diamond substrates are comprehensively studied by white-light optical interference microscopy, atomic-force microscopy, and X-ray diffraction analysis. Procedures that provide a means for characterizing the substrate parameters most critical for epitaxial application with the laboratory equipment are described. It is shown that the jewelry-type characterization of diamond substrates is insufficient to assess the possibility of their use for the epitaxial growth of chemical-vapor-deposited (CVD) diamond.

Keywords: High Pressure-high Temperature (HPHT), Single-crystal Diamond Substrates, HPHT Diamond, Epitaxial Growth, Miscut Angle.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.11.46592.14


 English version:
Semiconductors, 2018, 52:11, 1432–1436

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