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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 11, Pages 1326–1330 (Mi phts5690)

This article is cited in 1 paper

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Spectroscopy of single AlInAs and (111)-oriented InGaAs quantum dots

I. A. Derebezovab, V. A. Gaislera, A. V. Gaislera, D. V. Dmitrieva, A. I. Toropova, M. Von Helversenc, C. De la Hayec, S. Bounouarc, S. Reitzensteinc

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Siberian State University of Telecommunications and Informatics, Novosibirsk
c Technische Universität Berlin, Institut für Festkörperphysik Eugene-Wigner-Gebäude, D-10623 Berlin, Federal Republic of Germany

Abstract: A system of AlInAs- and InGaAs(111)-based quantum dots is studied. The use of wide-gap Al$_{x}$In$_{1-x}$As alloys as a basis for quantum dots provides a means for substantially extending the spectral region of emission to shorter wavelengths, including the region close to 770 nm which is of interest for the engineering of aerospace systems of quantum cryptography. The fine structure of exciton states in AlInAs and InGaAs(111) quantum dots is studied. It is shown that, for a set of quantum dots, the splitting of exciton states is comparable to the natural width of exciton lines, which is of interest for the engineering of emitters of photon pairs on the basis of these quantum dots.

Keywords: InGaAs, Quantum Dots (QDs), Exciton States, Polarization-entangled Photon Pairs.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.11.46593.15


 English version:
Semiconductors, 2018, 52:11, 1437–1441

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