Plasma chemical etching of gallium arsenide in C$_{2}$F$_{5}$Cl-based inductively coupled plasma

The plasma chemical etching of gallium arsenide in chloropentafluoroethane (C$_{2}$F$_{5}$Cl) inductively coupled plasma is for the first time performed taking into account surface passivation by products of reagent decomposition. The elemental composition of deposited layers, their density, and morphological properties are studied. It is established that the smoothest etching profile is implemented when using a large freon flow and low capacitive power. Etching anisotropy is retained in such a mode at a depth of 7 $\mu$m with an etching rate of 230 nm/min.