K. E. Kudryavtsev, A. A. Dubinov, V. Ya. Aleshkin, D. V. Yurasov, P. V. Gorlachuk, Yu. L. Ryaboshtan, A. A. Marmalyuk, A. V. Novikov, Z. F. Krasil'nik, “Stimulated emission in the 1.3–1.5 <nobr>$\mu$</nobr>m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11,Pages <nobr>1384

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates

K. E. Kudryavtsev^ab, A. A. Dubinov^ab, V. Ya. Aleshkin^ab, D. V. Yurasov^a, P. V. Gorlachuk^c, Yu. L. Ryaboshtan^c, A. A. Marmalyuk^c, A. V. Novikov^ab, Z. F. Krasil'nik^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b National Research Lobachevsky State University of Nizhny Novgorod
^c Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: Hybrid laser structures with AlGaInAs quantum wells are grown by metalorganic vapor phase epitaxy on Ge/Si(100) “virtual” substrates using GaAs and InP buffer layers. Stimulated emission is achieved under optical pumping of the prepared samples in the range of 1.3–1.5 $\mu$m at liquid-nitrogen temperature. The stimulated-emission threshold is 30–70 kW/cm$^2$.

Keywords: AlGaInAs QWs, Stimulated Emission (SE), Quantum Wells (QWs), Laser Structure, SE Threshold.

Received: 25.04.2018
Accepted: 07.05.2018

DOI: 10.21883/FTP.2018.11.46603.25