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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 10, Pages 1191–1196 (Mi phts5714)

This article is cited in 2 papers

Semiconductor physics

Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates

M. V. Maksimova, A. M. Nadtochiya, Yu. M. Shernyakovb, A. S. Payusovb, A. P. Vasil'evc, V. M. Ustinovcd, A. A. Serinb, N. Yu. Gordeevb, A. E. Zhukova

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
d Saint Petersburg Electrotechnical University "LETI"

Abstract: The characteristics of lasers of the 1.44–1.46-$\mu$m optical range grown on GaAs substrates using a metamorphic buffer are studied. The active region of the laser contains 10 rows of InAs/In$_{0.4}$Ga$_{0.6}$As/In$_{0.2}$Ga$_{0.8}$As quantum dots. It is shown that the use of special selective high-temperature annealing along with the application of short-period In$_{0.2}$Ga$_{0.8}$As/In$_{0.2}$Al$_{0.3}$Ga$_{0.5}$As short-period superlattices makes it possible to substantially decrease the density of threading dislocations in the active region. A threshold current density of 1300 A cm$^{-2}$, external differential quantum efficiency of 38%, and maximal pulsed-mode output power of 13 W are attained for a laser with a broad area 3 mm in length.

Keywords: GaAs Substrate, Quantum Dots Grown, Metamorphic Buffer, Threshold Current Density, Threading Dislocations.

Received: 10.04.2018
Accepted: 17.04.2018

DOI: 10.21883/FTP.2018.10.46460.8883


 English version:
Semiconductors, 2018, 52:10, 1311–1316

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