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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 10, Pages 1213–1219 (Mi phts5718)

This article is cited in 3 papers

Manufacturing, processing, testing of materials and structures

Copper(I) selenide thin films: composition, morphology, structure, and optical properties

L. N. Maskaevaab, E. A. Fedorovaa, V. F. Markovab, M. V. Kuznetsovc, O. A. Lipinac, A. V. Pozdina

a Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
b Ural Institute of the State Fire Service, Yekaterinburg, Russia
c Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg

Abstract: The systematized results of studies of the composition, morphology, structure, optical properties, and conductivity of hydrochemically deposited copper(I) selenide thin films (Cu$_{1.8}$Se) with the thickness of 390–400 nm are reported. The studies are carried out using scanning electron microscopy, energy-dispersive analysis, X-ray diffraction analysis, and X-ray photoelectron spectroscopy. The hole conductivity of the layers is established by the thermopower technique. The optical band gap determined from the results of studies of optical absorbance and diffuse reflection spectra of the films at 298 K is 2.5 and 1.84 eV for direct and indirect optical transitions, respectively.

Received: 22.01.2018
Accepted: 31.01.2018

DOI: 10.21883/FTP.2018.10.46464.8827


 English version:
Semiconductors, 2018, 52:10, 1334–1340

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