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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 8, Pages 823–826 (Mi phts5747)

This article is cited in 1 paper

Non-electronic properties of semiconductors (atomic structure, diffusion)

Solid-phase reactions and phase transformations in a nanoscale bismuth/selenium film structure

V. Ya. Kogai, G. M. Mikheev

Institute of Mechanics, Ural Branch of RAS, Izhevsk

Abstract: Experimental results of a study concerned with solid-phase reactions and phase transformations in a Bi/Se nanoscale film structure under heat treatment in vacuum are presented. Nanocrystalline Bi$_{2}$Se$_{3}$, BiSe, and Bi$_{4}$Se$_{3}$ films are obtained for the first time by solid-phase synthesis at various ratios between the Bi and Se layer thicknesses. The phase-transformation temperatures at which Se, BiSe, and Bi4Se3 crystalline phases are formed are determined. The average crystallite sizes in the Bi$_{2}$Se$_{3}$, BiSe, and Bi$_{4}$Se$_{3}$ films are found to be 21, 23, and 33 nm, respectively.

Received: 20.09.2017
Accepted: 18.10.2017

DOI: 10.21883/FTP.2018.08.46204.8735


 English version:
Semiconductors, 2018, 52:8, 957–960

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