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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 8, Pages 847–852 (Mi phts5752)

This article is cited in 2 papers

Electronic properties of semiconductors

Microwave magnetoabsorption oscillations in Fe-doped HgSe crystals

A. I. Veingera, I. V. Kochmana, V. I. Okulovb, M. D. Andriichukc, L. D. Paranchichc

a Ioffe Institute, St. Petersburg
b Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
c Chernivtsi National University named after Yuriy Fedkovych

Abstract: Magnetoresistance oscillations are considered in the case of microwave-radiation absorption in HgSe samples with a different Fe-impurity concentration. From the simultaneous analysis of the field and temperature dependences of the Shubnikov–de Haas oscillations, the effective mass, the Dingle temperature, and the quantum-limit field corresponding to the Fermi level are obtained. A method for analyzing the spectra with several oscillation frequencies, i.e., the beating effect, is proposed. The results are compared with data obtained by Hall measurements.

Received: 07.12.2017
Accepted: 15.12.2017

DOI: 10.21883/FTP.2018.08.46208.8793


 English version:
Semiconductors, 2018, 52:8, 980–985

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