Influence of isotropic pressure on the current–voltage characteristics of surface-barrier diodes Sb–$p$-Si$\langle$Mn$\rangle$–Au

The influence of hydrostatic pressure on the current–voltage characteristics of surface-barrier diode structures of the Sb–$p$-Si$\langle$Mn$\rangle$–Au type are investigated. The potential-barrier height and the baric coefficient of its variation are found to be $e\varphi_\delta$ = 0.75 eV and $\delta$ = -1.54 $\times$ 10$^{-11}$ eV/Pa, respectively.