RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 8, Pages 954–957 (Mi phts5770)

This article is cited in 17 papers

Semiconductor physics

Room temperature lasing of multi-stage quantum-cascade lasers at 8 $\mu$m wavelength

A. V. Babichevab, A. G. Gladyshevb, A. S. Kurochkina, E. S. Kolodeznyia, G. S. Sokolovskiiacd, V. E. Bugrova, L. Ya. Karachinskyabc, I. I. Novikovabc, A. Bousseksoue, A. Yu. Egorova

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Connector Optics LLC, St. Petersburg
c Ioffe Institute, St. Petersburg
d Saint Petersburg Electrotechnical University "LETI"
e Center of Nanoscience and Nanotechnology (C2N) Université Paris Sud and Paris-Saclay

Abstract: Room-temperature lasing at a wavelength of 8 $\mu$m in multistage quantum-cascade lasers pumped by current pulses is demonstrated. A quantum-cascade laser heterostructure based on the In$_{0.53}$Ga$_{0.47}$As/Al$_{0.48}$In$_{0.52}$As alloy heteropair, matched to an InP substrate, is grown by molecular-beam epitaxy and consists of 50 identical cascades placed in a waveguide with air as the top cladding. A threshold current density of $\sim$5.1 kA/cm$^2$ at a temperature of 300 K is obtained in ridge lasers with a cavity length of 1.4 mm and a ridge width of 24 $\mu$m.

Received: 01.02.2018
Accepted: 12.02.2018

DOI: 10.21883/FTP.2018.08.46226.8834


 English version:
Semiconductors, 2018, 52:8, 1082–1085

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024