RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 7, Pages 699–701 (Mi phts5775)

This article is cited in 1 paper

Electronic properties of semiconductors

Photothreshold of an $\alpha$-GeS layered crystal: first-principles calculation

Z. A. Jahangirliab, F. M. Gashumzadea, D. A. Guseinovaa, B. G. Mehdiyeva, N. B. Mustafaeva

a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Azerbaijan Technical University, Baku

Abstract: The photothreshold of an $\alpha$-GeS layered crystal is calculated from first principles based on the functional density method depending on its thickness. Two neighboring crystal plates consisting of several layers are separated by vacuum 4 layers thick, which corresponds to the doublet unit cell size of a bulk crystal. It is shown that the magnitude of the photothreshold is almost invariable with a crystal thickness larger than 10 layers.

Received: 04.04.2017
Accepted: 29.11.2017

DOI: 10.21883/FTP.2018.07.46037.8602


 English version:
Semiconductors, 2018, 52:7, 840–842

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024