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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 7, Pages 712–717 (Mi phts5778)

This article is cited in 5 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Transverse Nernst–Ettingshausen effect in superlattices upon electron-phonon scattering

S. R. Figarovaa, G. I. Guseinovb, V. R. Figarovc

a Baku State University
b Azerbaijan Architecture and Construction University, Baku, Azerbaijan
c Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan

Abstract: The Nernst–Ettingshausen coefficient is calculated in superlattices with the cosine dispersion law in the case of the scattering of charge carriers at acoustic and polar optical phonons in a magnetic field in the layer plane. A significant increase in the Nernst–Ettingshausen coefficient of a degenerate quasi-three-dimensional electron gas in a weak magnetic field is shown. For polar optical-phonon scattering, the Nernst–Ettingshausen coefficient changes sign in a strong magnetic field.

Received: 14.06.2017
Accepted: 17.10.2017

DOI: 10.21883/FTP.2018.07.46040.8669


 English version:
Semiconductors, 2018, 52:7, 853–858

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© Steklov Math. Inst. of RAS, 2024