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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 7, Pages 745–750 (Mi phts5784)

This article is cited in 6 papers

Micro- and nanocrystalline, porous, composite semiconductors

Dielectric properties of nanocrystalline tungsten oxide in the temperature range of 223–293 K

S. A. Kozyukhinab, S. A. Bedinc, P. G. Rudakovskayaa, O. S. Ivanovaa, V. K. Ivanovad

a Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow
b Tomsk State University
c Moscow Pedagogical University, Moscow, Russian Federation, Moscow
d Moscow Technological University, Moscow

Abstract: The dielectric properties of nanocrystalline tungsten oxide are studied in the temperature range of 223–293 K and in the frequency range $\nu$ = 10$^{-2}$–10$^6$ Hz. Powders of WO$_3$ with particle sizes of 110, 150, and 200 nm are prepared by the heat treatment of ammonium paratungstate at various temperatures. It is established that the frequency dependences of the conductivity for all samples increase with an increase in frequency, while the polarization characteristics $\varepsilon'(\nu)$ and $\varepsilon''(\nu)$ decrease. It is found that the frequency dependences of the conductivity are described by a function of the form $\nu^s$ with an index in the range of (0.83–0.90) $\pm$ 0.01, which is characteristic of the “hopping” mechanism of charged-particle motion (complexes) over localized states confined by potential barriers and structural defects.

Received: 30.08.2017
Accepted: 12.09.2017

DOI: 10.21883/FTP.2018.07.46046.8719


 English version:
Semiconductors, 2018, 52:7, 885–890

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