Study of deep levels in a HIT solar cell

The results of studying a HIT (heterojunction with an intrinsic thin layer) HIT Ag/ITO/$a$-Si:H$(p)$/$a$-Si:H$(i)$/$c$-Si$(n)$/$a$-Si:H$(i)$/$a$-Si:H($n^{+}$)/ITO/Ag solar cell by the capacitance–voltage characteristic and current deep-level relaxation transient spectroscopy methods are presented. The temperature dependence of the capacitance–voltage characteristics of the HIT structure and deep-energy-level parameters are studied. The results of comprehensive studies by the above methods are used to determine the features of the energy-band diagram of actual HIT structures.