V. V. Emtsev, E. V. Gushchina, V. N. Petrov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, A. P. Kartashova, A. A. Zybin, V. V. Kozlovsky, M. F. Kudoyarov, A. V. Sakharov, G. A. Oganesyan, D. S. Poloskin, V. V. Lundin, “Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 7,Pages <nobr>804

This article is cited in 3 papers

Semiconductor physics

Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system

V. V. Emtsev^a, E. V. Gushchina^a, V. N. Petrov^a, N. A. Talnishnikh^b, A. E. Chernyakov^b, E. I. Shabunina^a, N. M. Shmidt^a, A. S. Usikov^c, A. P. Kartashova^a, A. A. Zybin^d, V. V. Kozlovsky^e, M. F. Kudoyarov^a, A. V. Sakharov^a, G. A. Oganesyan^a, D. S. Poloskin^a, V. V. Lundin^a

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg, Russia
^c Nitride Crystals Inc., 181 E Industry Ct., Ste. B, Deer Park, NY 11729, USA
^d ZAO Svetlana-Elektronpribor, St. Petersburg
^e Peter the Great St. Petersburg Polytechnic University

Abstract: A fractal-percolation system that includes extended defects and random fluctuations in the alloy composition is formed during the growth of device structures based on Group-III nitrides. It is established that the specific features of this system are determined not only by the growth conditions. It is shown that the diversity of the electrical and optical properties of InGaN/GaN LEDs (light-emitting diodes) emitting at wavelengths of 450–460 and 519–530 nm, as well as that of the electrical properties of AlGaN/GaN HEMT (high-electron-mobility transistor) structures, is due to modification of the properties of the fractal-percolation system both during the growth process and under the action of the injection current and irradiation. The influence exerted by these specific features on the service life of light-emitting devices and on the reliability of AlGaN/GaN HEMT structures is discussed.

Received: 21.12.2017
Accepted: 25.12.2017

DOI: 10.21883/FTP.2018.07.46056.8805