M. I. Mitrofanov, Ya. V. Levitskii, G. V. Voznyuk, E. E. Tatarinov, S. N. Rodin, M. A. Kaliteevskii, V. P. Evtikhiev, “Concentric hexagonal GaN structures for nanophotonics, fabricated by selective vapor-phase epitaxy with ion-beam etching”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 7,Pages <nobr>816–818</nobr>

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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 7, Pages 816–818 (Mi phts5796)

This article is cited in 2 papers

Manufacturing, processing, testing of materials and structures

Concentric hexagonal GaN structures for nanophotonics, fabricated by selective vapor-phase epitaxy with ion-beam etching

M. I. Mitrofanov^ab, Ya. V. Levitskii^ab, G. V. Voznyuk^c, E. E. Tatarinov^c, S. N. Rodin^ab, M. A. Kaliteevskii^acd, V. P. Evtikhiev^a

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^d Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg

Abstract: In the Si$_3$N$_4$ layer, coaxial and single submicrometer GaN structures of hexagonal shape with pyramidal facets are formed by selective vapor-phase epitaxy in windows produced with a focused ion beam. It is found that coaxial hexagonal structures are formed during the growth process in ring-shaped mask windows.

Received: 18.12.2017
Accepted: 18.12.2017

DOI: 10.21883/FTP.2018.07.46058.8797

English version: Semiconductors, 2018, 52:7, 954–956

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