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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 6, Pages 560–564 (Mi phts5801)

This article is cited in 2 papers

Electronic properties of semiconductors

On the structure of the Mössbauer spectra of $^{119m}$Sn impurity atoms in lead chalcogenides under conditions of the radioactive equilibrium of $^{119m}$Te/$^{119}$Sn isotopes

E. I. Terukova, A. V. Marchenkob, P. P. Sereginb, N. N. Zhukovb

a Ioffe Institute, St. Petersburg
b Herzen State Pedagogical University of Russia, St. Petersburg

Abstract: The method of Mössbauer emission spectroscopy with $^{119m}$Te and $^{119}$Sb parent isotopes in the radioactive-equilibrium state is used to obtain information on the localization and valence state of $^{119m}$Sn daughter atoms formed from the $^{119}$Sb and $^{119m}$Te parent atoms at cation and anion sites of the lattice of PbSe and PbTe lead chalcogenides.

Received: 26.07.2017
Accepted: 12.09.2017

DOI: 10.21883/FTP.2018.06.45915.8650


 English version:
Semiconductors, 2018, 52:6, 708–712

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© Steklov Math. Inst. of RAS, 2024