Sergei Timoshnev, Andrey Mizerov, Maxim Sobolev, Ekaterina Nikitina, “Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5,Page 524

This article is cited in 4 papers

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy

Sergei Timoshnev, Andrey Mizerov, Maxim Sobolev, Ekaterina Nikitina

St. Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia

Abstract: The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.

Language: English