V. N. Zhmerik, T. V. Shubina, D. V. Nechaev, A. N. Semenov, D. A. Kirilenko, V. Yu. Davydov, A. N. Smirnov, I. A. Eliseev, G. Posina, S. V. Ivanov, “Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on <nobr>$\mu$</nobr>-cone patterned sapphire substrates by plasma-assisted MBE”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5,Page 526

This article is cited in 2 papers

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on $\mu$-cone patterned sapphire substrates by plasma-assisted MBE

V. N. Zhmerik^a, T. V. Shubina^a, D. V. Nechaev^a, A. N. Semenov^a, D. A. Kirilenko^a, V. Yu. Davydov^a, A. N. Smirnov^a, I. A. Eliseev^a, G. Posina^b, S. V. Ivanov^a

^a Ioffe Institute, 194021 St. Petersburg, Russia
^b Linköping University, Department of Physics, Chemistry and Biology, S-58183 Linköping, Sweden

Abstract: We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates ($\mu$-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on $c$-oriented areas of the $\mu$-CPSSs and followed by growth of 1-$\mu$m-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000$\bar1$) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.

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