V. V. Rumyantsev, L. S. Bovkun, A. M. Kadykov, M. A. Fadeev, A. A. Dubinov, V. Ya. Aleshkin, N. N. Mikhailov, S. A. Dvoretsky, B. Piot, M. Orlita, M. Potemski, F. Teppe, S. V. Morozov, V. I. Gavrilenko, “Magnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 4,Page 464

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Optoelectronics, optical properties

Magnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range

V. V. Rumyantsev^ab, L. S. Bovkun^ac, A. M. Kadykov^ad, M. A. Fadeev^a, A. A. Dubinov^ab, V. Ya. Aleshkin^ab, N. N. Mikhailov^ef, S. A. Dvoretsky^f, B. Piot^c, M. Orlita^cg, M. Potemski^c, F. Teppe^d, S. V. Morozov^ab, V. I. Gavrilenko^ab

^a Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
^b Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
^c Laboratoire National des Champs Magnétiques Intenses, LNCMI-CNRS-UGA-UPS-INSA-EMFL, 38042 Grenoble, France
^d UMR CNRS 5221, GIS-TERALAB, Université Montpellier, 34095 Montpellier, France
^e Novosibirsk State University, 630090 Novosibirsk, Russia
^f Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
^g Institute of Physics, Charles University, 12116 Prague, Czech Republic

Abstract: We investigate the prospects of HgTe/HgCdTe quantum wells for long-wavelength interband lasers ($\lambda$ = 15–30 $\mu$m). The properties of stimulated emission (SE) and magnetoabsorbtion data of QWs structures with wide-gap HgCdTe dielectric waveguide provide an insight on dominating non-radiative carrier recombination mechanism. It is shown that the carrier heating under intense optical pumping is the main factor limiting the SE wavelength and intensity, since the Auger recombination is greatly enhanced when carriers populate high energy states in the valence band.

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