G. E. Cirlin, R. R. Reznik, I. V. Shtrom, A. I. Khrebtov, Yu. B. Samsonenko, S. A. Kukushkin, T. Kasama, N. Akopian, “Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 4,Page 469

This article is cited in 10 papers

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Optoelectronics, optical properties

Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources

G. E. Cirlin^abcd, R. R. Reznik^abcd, I. V. Shtrom^ac, A. I. Khrebtov^ab, Yu. B. Samsonenko^abc, S. A. Kukushkin^e, T. Kasama^f, N. Akopian^f

^a St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
^b ITMO University, 197101 St. Petersburg, Russia
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103 St. Petersburg, Russia
^d Peter the Great Saint Petersburg Polytechnic University, 195251 St. Petersburg, Russia
^e Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, 199178 St. Petersburg, Russia
^f DTU Photonics,Technical University of Denmark, Kgs. Lyngby, Denmark 2800

Abstract: III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.

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