D. I. Bilenko, O. Ya. Belobrovaya, D. V. Terin, V. V. Galushka, I. V. Galushka, A. E. Zharkova, V. P. Polyanskaya, V. I. Sidorov, I. T. Yagudin, “Effect of low <nobr>$\gamma$</nobr>-radiation doses on the optical properties of porous silicon”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 3,Pages <nobr>349

This article is cited in 2 papers

Micro- and nanocrystalline, porous, composite semiconductors

Effect of low $\gamma$-radiation doses on the optical properties of porous silicon

D. I. Bilenko, O. Ya. Belobrovaya, D. V. Terin, V. V. Galushka, I. V. Galushka, A. E. Zharkova, V. P. Polyanskaya, V. I. Sidorov, I. T. Yagudin

Saratov State University

Abstract: The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of $\gamma$ photons from a $^{226}$Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed.

Received: 01.03.2017
Accepted: 29.06.2017

DOI: 10.21883/FTP.2018.03.45620.8570