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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 2, Pages 161–166 (Mi phts5910)

This article is cited in 4 papers

Electronic properties of semiconductors

Frequency dependence of the conductivity of disordered semiconductors in the region of the transition to the fixed-range hopping regime

M. A. Ormont, I. P. Zvyagin

Faculty of Physics, Lomonosov Moscow State University

Abstract: The effect of hybridization of electron states on the high-frequency conductivity of disordered semiconductors is studied. It is shown that the dependence of the pre-exponential factor of the resonance integral on the intercenter separation in a pair determines the abruptness of the change in conductivity mechanisms near the transition of the frequency dependence of the real part of the conductivity $\sigma_1(\omega)$ from sublinear to quadratic. The abruptness of the change of the conductivity regimes is associated with a rapid decrease in hopping distance with increasing frequency near the transition, which leads to a substantial relative decrease in the contribution from the phononless conductivity component in the variable-range hopping regime with increasing frequency and transition to the fixed-range hopping conductivity regime.

Received: 27.02.2017
Accepted: 22.05.2017

DOI: 10.21883/FTP.2018.02.45437.8566


 English version:
Semiconductors, 2018, 52:2, 150–155

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