Ya. V. Lubyanskiy, A. D. Bondarev, I. P. Sotnikov, N. A. Bert, V. V. Zolotarev, D. A. Kirilenko, K. P. Kotlyar, N. A. Pikhtin, I. S. Tarasov, “Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition”, Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 2,Pages <nobr>196

This article is cited in 7 papers

Surface, interfaces, thin films

Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition

Ya. V. Lubyanskiy^a, A. D. Bondarev^a, I. P. Sotnikov^abc, N. A. Bert^a, V. V. Zolotarev^a, D. A. Kirilenko^a, K. P. Kotlyar^c, N. A. Pikhtin^a, I. S. Tarasov^a

^a Ioffe Institute, St. Petersburg
^b Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, Russia
^c Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg

Abstract: In the work we investigate synthesis of aluminum nitride films using reactive ion plasma deposition in oxygen/nitrogen gas mixture for application as optical elements for power semiconductor lasers. The experimental refractive index of synthesized AlNO films is dependent on oxygen composition and is decreasing in diapason from 1.76 to 2.035 at elevation of the oxygen fraction.It is shown that the AlN films synthesized by pure nitrogen plasma are polycrystalline and textured. The oxygen presence in discharging gas results to growth of amorphous phase of the AlNO film.

Received: 11.07.2017
Accepted: 19.07.2017

DOI: 10.21883/FTP.2018.02.45443.8685