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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 2, Pages 227–232 (Mi phts5920)

This article is cited in 7 papers

Micro- and nanocrystalline, porous, composite semiconductors

Microstructure and Raman scattering of Cu$_{2}$ZnSnSe$_{4}$ thin films deposited onto flexible metal substrates

A. Stanchika, V. F. Gremenoka, S. A. Bashkirova, M. S. Tivanovb, R. L. Juškėnasc, G. F. Novikovd, R. Giraitisc, A. M. Saade

a Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus
b Belarusian State University, Minsk
c State Research Institute "Center for Physical Sciences and Technology", Vilnius, Lithuania
d Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
e Al-Balqa Applied University, Amman, Jordan

Abstract: Cu$_{2}$ZnSnSe$_{4}$ thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu$_{2}$ZnSnSe$_{4}$ films are studied by scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy.

Received: 22.03.2017
Accepted: 28.03.2017

DOI: 10.21883/FTP.2018.02.45447.8585


 English version:
Semiconductors, 2018, 52:2, 215–220

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