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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 2, Pages 272–275 (Mi phts5928)

Manufacturing, processing, testing of materials and structures

Luminescence properties of Cd$_{x}$Zn$_{1-x}$O thin films

A. A. Lotin, O. A. Novodvorskii, L. S. Parshina, O. D. Khramova, E. A. Cherebylo, V. A. Mikhalevskii

Institute on Laser and Information Technologies, Branch of the Federal Research Centre "Crystallography and Photonics", Shatura, Moscow region, Russia

Abstract: Thin Cd$_{x}$Zn$_{1-x}$O films with a Cd content in the range from zero to 35 at % are synthesized by pulsed laser deposition. A record-breaking solubility limit of 30 at % of Cd in wurtzite-structured Cd$_{x}$Zn$_{1-x}$O thin films is attained. Apart from the exciton peak, additional peaks associated with an inhomogeneous distribution of Cd in the samples are observed in the low-temperature (10 K) photoluminescence spectra of Cd$_{0.15}$Zn$_{0.85}$O and Cd$_{0.3}$Zn$_{0.7}$O films. An unsteady ($S$-like) temperature dependence of the spectral position of the exciton photoluminescence peak in Cd$_{x}$Zn$_{1-x}$O films is observed. Such a dependence is associated with the effect of the localization of charge carriers.

Received: 11.05.2017
Accepted: 22.05.2017

DOI: 10.21883/FTP.2018.02.45455.8638


 English version:
Semiconductors, 2018, 52:2, 260–263

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