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Fizika i Tekhnika Poluprovodnikov, 2018 Volume 52, Issue 1, Pages 16–22 (Mi phts5934)

This article is cited in 4 papers

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Electron effective mass and $g$ factor in wide hgte quantum wells

S. V. Gudinaa, V. N. Neverova, E. V. Ilchenkoa, A. S. Bogolubskiia, G. I. Kharusa, N. G. Shelushininaa, S. M. Podgornykhab, M. V. Yakuninab, N. N. Mikhailovcd, S. A. Dvoretskiice

a Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
d Novosibirsk State University
e Tomsk State University

Abstract: The magnetic-field (0 T $<B<$ 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K $<T<$ 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors $\nu$ = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the $g$ factor ( $\cong$ 80) are obtained.

Received: 27.04.2017
Accepted: 12.05.2017

DOI: 10.21883/FTP.2018.01.45312.39


 English version:
Semiconductors, 2018, 52:1, 12–18

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