V. N. Trukhin, A. D. Bouravlev, I. A. Mustafin, G. E. Cirlin, J. P. Kakko, H. Lipsanen, “Ultrafast dynamics of photoinduced electron–hole plasma in semiconductor nanowires”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 12,Page 1631

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Ultrafast dynamics of photoinduced electron–hole plasma in semiconductor nanowires

V. N. Trukhin^a, A. D. Bouravlev^b, I. A. Mustafin^ac, G. E. Cirlin^b, J. P. Kakko^d, H. Lipsanen^d

^a Ioffe Institute, St. Petersburg
^b Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^d Department of Electronics and Nanoengineering, Aalto University, Finland

Abstract: Experimental results obtained in a study of the effect of electron–hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.

Received: 27.04.2017
Accepted: 12.05.2017

DOI: 10.21883/FTP.2017.12.45177.40