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Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 11, Pages 1443–1446 (Mi phts5984)

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Optical thyristor based on GaAs/InGaP materials

B. N. Zvonkov, N. V. Baidus, S. M. Nekorkin, O. V. Vikhrova, A. V. Zdoroveyshchev, A. V. Kudrin, V. E. Kotomina

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The possibility of creating thyristor structures with external optical control by laser radiation with a wavelength of $\sim$800 nm, based on single-crystal wafers of semi-insulating GaAs and layers of InGaP with the lattice parameter compatible with GaAs, is shown.

Received: 27.04.2017
Accepted: 12.05.2017

DOI: 10.21883/FTP.2017.11.45087.01


 English version:
Semiconductors, 2017, 51:11, 1391–1394

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