A. P. Gorshkov, N. S. Volkova, P. G. Voronin, A. V. Zdoroveyshchev, L. A. Istomin, D. A. Pavlov, Yu. V. Usov, S. B. Levichev, “Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11,Pages <nobr>1447

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots

A. P. Gorshkov^a, N. S. Volkova^bc, P. G. Voronin^a, A. V. Zdoroveyshchev^b, L. A. Istomin^c, D. A. Pavlov^a, Yu. V. Usov^a, S. B. Levichev^b

^a National Research Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^c Chemistry Research Institute of N. I. Lobachevsky, State University of Nizhny Novgorod

Abstract: The capping of an array of self-assembled InAs/GaAs quantum dots by an InGaAs quantum-well layer leads to an increase in their size due to indium enrichment of the region near the top of the quantum dots, which decreases the energy of the ground-state optical transition in quantum dots by 50 meV and shifts the hole wave function toward the top of the quantum dot.

Received: 27.04.2017
Accepted: 12.05.2017

DOI: 10.21883/FTP.2017.11.45088.02