E. D. Leshchenko, V. G. Dubrovskii, “Inhomogeneous dopant distribution in III–V nanowires”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11,Pages <nobr>1480

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Inhomogeneous dopant distribution in III–V nanowires

E. D. Leshchenko^ab, V. G. Dubrovskii^abc

^a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^c Ioffe Institute, St. Petersburg

Abstract: We present a theoretical study of the dopant spatial distribution in III–V nanowires grown by molecular beam epitaxy. The evolution of the dopant concentration is obtained by solving the non-stationary diffusion equation. Within the model, it is shown why and how the dopant inhomogeneity appears, as observed experimentally in the case of Be doping of GaAs nanowires and in other material systems.

Received: 27.04.2017

DOI: 10.21883/FTP.2017.11.45094.08