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Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 11, Pages 1525–1529 (Mi phts6001)

This article is cited in 1 paper

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

R. R. Reznikabcd, K. P. Kotlyara, I. V. Shtromace, I. P. Sotnikovace, S. A. Kukushkinf, A. V. Osipovf, G. E. Cirlinbca

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
d Peter the Great St. Petersburg Polytechnic University
e Ioffe Institute, St. Petersburg
f Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg

Abstract: The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first time. The diameter of these NWs is smaller than that of similar NWs grown on a silicon substrate. In particular, the minimum diameter is less than 10 nm for InAs NWs. In addition, it was assumed on the basis of photoluminescence measurements that, when AlGaAs NWs are grown on these substrates, a complex structure is formed due to the self-organized formation of AlGaAs quantum dots with a lower content of aluminum, embedded in the NWs.

Received: 27.04.2016
Accepted: 12.05.2017

DOI: 10.21883/FTP.2017.11.45104.18


 English version:
Semiconductors, 2017, 51:11, 1472–1476

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