V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, A. G. Fefelov, D. V. Yurasov, Z. F. Krasil'nik, “Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11,Pages <nobr>1530

This article is cited in 4 papers

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

V. Ya. Aleshkin^ab, N. V. Baidus^ab, A. A. Dubinov^ab, K. E. Kudryavtsev^ab, S. M. Nekorkin^a, A. V. Novikov^ab, A. V. Rykov^a, I. V. Samartsev^a, A. G. Fefelov^c, D. V. Yurasov^ab, Z. F. Krasil'nik^ab

^a Lobachevsky State University of Nizhny Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^c NPP "Salyut"

Abstract: InGaAs/GaAs/AlGaAs laser diodes with quantum wells are grown by the metal-organic chemical vapor deposition (MOCVD) method on an exact Si (001) substrate with a Ge buffer layer. The diodes generate stimulated emission in the pulsed mode at room temperature in the spectral range from 1.09 to 1.11 $\mu$m.

Received: 15.05.2017
Accepted: 31.05.2017

DOI: 10.21883/FTP.2017.11.45105.19