E. A. Tarasova, S. V. Obolensky, O. E. Galkin, A. V. Hananova, A. B. Makarov, “Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11,Pages <nobr>1543

This article is cited in 3 papers

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation

E. A. Tarasova, S. V. Obolensky, O. E. Galkin, A. V. Hananova, A. B. Makarov

Lobachevsky State University of Nizhny Novgorod

Abstract: A method for mathematical processing of the results of measurements of the capacitance–voltage characteristics for an AlGaN/GaN HEMT (high electron mobility transistor) before and after $\gamma$-neutron irradiation with a fluence of 0.4 $\times$ 10$^{14}$ cm$^{-2}$ is suggested. The results of physical–topological simulation of an AlGaN/GaN HEMT on a SiC substrate are described. The error in calculating the GaN HEMT parameters due to inaccuracy in determining the electron distribution profile is determined.

Received: 27.04.2017
Accepted: 12.05.2017

DOI: 10.21883/FTP.2017.11.45108.22