N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, A. V. Rykov, A. A. Sushkov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, A. N. Yablonskii, Z. F. Krasil'nik, “Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11,Pages <nobr>1579

This article is cited in 5 papers

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

N. V. Baidus^a, V. Ya. Aleshkin^ab, A. A. Dubinov^ab, K. E. Kudryavtsev^ab, S. M. Nekorkin^a, A. V. Novikov^ab, D. A. Pavlov^a, A. V. Rykov^a, A. A. Sushkov^a, M. V. Shaleev^ab, P. A. Yunin^ab, D. V. Yurasov^ab, A. N. Yablonskii^ab, Z. F. Krasil'nik^ab

^a Lobachevsky State University of Nizhny Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The growth of InGaAs/GaAs/AlGaAs laser structures by MOCVD at low pressures on Si(001) substrates with a Ge epitaxial metamorphic buffer layer of various thicknesses is studied. The results of the influence of the growth temperature and incorporation of additional AlAs layers at the boundary with the Ge/Si(001) substrate on the crystalline and optical quality of the formed III–V structures are presented. It is shown that the incorporation of the AlAs/GaAs/AlAs lattice at the initial growth stages of III–V heterostructures on Ge buffer layers grown on exact Si(001) substrates makes it possible to considerably decrease the density of threading defects and, consequently, form effectively emitting laser structures. The possibility of growing strained InGaAs quantum wells on Si(001) substrates allowing stimulated radiation in a wavelength region longer than 1100 nm is shown.

Received: 15.05.2017
Accepted: 31.05.2017

DOI: 10.21883/FTP.2017.11.45115.32