Tight-binding simulation of silicon and germanium nanocrystals

This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods and their application for the discription of silicon and germanium nanocrystals. Then, the tight-binding method with extended $s$, $p$, $d$, and $s^*$ basis is explained in details and the results obtained with the use of this method are presented.