F. I. Zubov, E. S. Semenova, I. V. Kul'kova, K. Yvind, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 10,Pages 1382

This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate

F. I. Zubov^a, E. S. Semenova^b, I. V. Kul'kova^b, K. Yvind^b, N. V. Kryzhanovskaya^a, M. V. Maksimov^a, A. E. Zhukov^a

^a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b DTU Fotonics Technical University of Denmark, Kgs. Lyngby, DK-2800 Denmark

Abstract: We report on a study of lasers with an emission wavelength of about 1.5 $\mu$m and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution with a band-gap width of 1.15 eV serves as the waveguide/matrix layer. A high characteristic temperature of the threshold current, $T_0$ = 205 K, is reached in the temperature range 20–50$^\circ$C in ridge-waveguide laser diodes. A correlation between the values of $T_0$ and the band-gap width of the waveguide layers is found.

Received: 27.03.2017
Accepted: 05.04.2017

DOI: 10.21883/FTP.2017.10.45017.8590