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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 10, Pages 1426–1433 (Mi phts6030)

This article is cited in 8 papers

Manufacturing, processing, testing of materials and structures

Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures

D. L. Alfimovaa, L. S. Luninab, M. L. Luninaa, D. A. Arustamyanb, A. E. Kazakovab, S. N. Chebotarevab

a Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
b Platov South-Russian State Polytechnic University (NPI), Novocherkassk, Rostov-on-Don oblast, Russia

Abstract: The results obtained in the growth of isoparametric InAlGaPAs/GaAs heterostructures are discussed. The composition, structural quality, and luminescence properties of the heterostructures are studied.

Received: 28.12.2016
Accepted: 28.02.2017

DOI: 10.21883/FTP.2017.10.45025.8511


 English version:
Semiconductors, 2017, 51:10, 1377–1384

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