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// Fizika i Tekhnika Poluprovodnikov
// Archive
Fizika i Tekhnika Poluprovodnikov,
2017
Volume 51,
Issue 10,
Pages
1426–1433
(Mi phts6030)
This article is cited in
8
papers
Manufacturing, processing, testing of materials and structures
Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures
D. L. Alfimova
a
,
L. S. Lunin
ab
,
M. L. Lunina
a
,
D. A. Arustamyan
b
,
A. E. Kazakova
b
,
S. N. Chebotarev
ab
a
Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
b
Platov South-Russian State Polytechnic University (NPI), Novocherkassk, Rostov-on-Don oblast, Russia
Abstract:
The results obtained in the growth of isoparametric InAlGaPAs/GaAs heterostructures are discussed. The composition, structural quality, and luminescence properties of the heterostructures are studied.
Received:
28.12.2016
Accepted:
28.02.2017
DOI:
10.21883/FTP.2017.10.45025.8511
Fulltext:
PDF file (338 kB)
Cited by
English version:
Semiconductors, 2017,
51
:10,
1377–1384
Bibliographic databases:
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Steklov Math. Inst. of RAS
, 2024