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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 8, Pages 1091–1095 (Mi phts6076)

This article is cited in 3 papers

Surface, interfaces, thin films

Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers

K. S. Sekerbaevab, E. T. Taurbaevab, A. I. Efimovac, V. Yu. Timoshenkocd, T. I. Taurbaevab

a SRI of Experimental and Theoretical Physics, Al-Farabi Kazakh National University, Almaty
b National Nanotechnology Laboratory of open type, al-Farabi KazNU
c Faculty of Physics, Lomonosov Moscow State University
d National Engineering Physics Institute "MEPhI", Moscow

Abstract: The infrared optical properties of anisotropic mesoporous silicon films containing free charge carriers (holes) are studied experimentally and theoretically. The results of simulation of the optical properties of the produced samples in the effective-medium approximation show a heavy dependence of the birefringence, reflection anisotropy, and dichroism on the concentration of free charge carriers. The unsteady behavior of the differential transmittance recorded for the samples at mutually perpendicular polarization directions of light are attributed to the effect of charge carriers with a concentration on the order of 10$^{19}$ cm$^{-3}$. The results of the study suggest that anisotropic silicon nanostructures are promising materials for infrared photonics and terahertz engineering.

Received: 13.12.2016
Accepted: 25.01.2017

DOI: 10.21883/FTP.2017.08.44796.8119


 English version:
Semiconductors, 2017, 51:8, 1047–1051

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