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Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 8, Pages 1110–1115 (Mi phts6079)

This article is cited in 18 papers

Micro- and nanocrystalline, porous, composite semiconductors

Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions

I. M. Gavrilina, D. G. Gromova, A. A. Dronova, S. V. Dubkova, R. L. Volkova, A. Yu. Trifonovba, N. I. Borgardta, S. A. Gavrilova

a National Research University of Electronic Technology, Zelenograd, Moscow, Russia
b State Research Institute of Physical Problems, Zelenograd, Moscow, Russia

Abstract: The results of studying the growth of filamentous Ge structures in aqueous electrolytes at various temperatures using In and Sn nanoparticle arrays as nucleation sites are given. The temperature of Ge cathodic deposition process from aqueous solutions has a significant effect on the layer structure deposited onto the surface. In the presence of metal particles in the molten state, filamentous Ge structures grow due to the cathodic reduction of Ge-containing ions on the electrode surface, followed by dissolution and crystallization in the melt at the substrate interface. The results obtained show the crucial role of liquid metal particles during the electrochemical formation of germanium nanowires.

Received: 12.12.2016
Accepted: 01.02.2017

DOI: 10.21883/FTP.2017.08.44799.8482


 English version:
Semiconductors, 2017, 51:8, 1067–1071

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