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Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 7, Pages 880–883 (Mi phts6089)

This article is cited in 3 papers

XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016

Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields

L. N. Luk'yanova, Yu. A. Boikov, O. A. Usov, V. A. Danilov, M. P. Volkov

Ioffe Institute, St. Petersburg

Abstract: The temperature and magnetic-field dependences of the galvanomagnetic properties of $n$-Bi$_2$Te$_3$ heteroepitaxial films in magnetic fields to 14 T at low temperatures are studied. It is shown that steps in the magnetic-field dependences of the quantum Hall effect and the plateau in the temperature dependences of the magnetoresistance of films are caused by topological surface states of Dirac fermions.

Received: 27.12.2016
Accepted: 12.01.2017

DOI: 10.21883/FTP.2017.07.44632.18


 English version:
Semiconductors, 2017, 51:7, 843–846

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